Effect of lattice deformation on electronic and optical properties of CuGaSe2: Ab-initio calculations

M. Bikerouin, M. Balli, M. Farkous, M. El-Yadri, F. Dujardin, A. Ben Abdellah, E. Feddi, J. D. Correa, M. E. Mora-Ramos

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


In this study, we have investigated the effect of bi-axial, ϵab, and uni-axial, ϵc, strains on the optoelectronic properties of chalcopyrite semiconductor CuGaSe2 through first-principles full potential linearized augmented plane wave method. These materials have recently attracted much interest within the materials science community. The results are obtained in the framework of Density Functional Theory (DFT), using the Generalized Gradient Approximation based on the minimization of total energy, together with the modified Becke-Johnson exchange-correlation potential, as implemented in the WIEN2k code. Our results show that unstrained CuGaSe2 is a direct band gap semiconductor with a energy of 1.16 eV, thus improving the results of some previous DFT calculations, but still below the accepted experimental data. The incorporation of biaxial and uniaxial strain results in a monotonous decreasing behavior of the energy band gap when both ϵab and ϵc change between -8% and +8%, with unstrained value being, approximately, at the middle of the variation range. It is also found that strain causes modifications in the index of refraction of the material, with modifications of its static value that rank above 10% over the entire range of deformations considered.

Original languageEnglish
Article number137783
JournalThin Solid Films
StatePublished - 29 Feb 2020


  • Copper gallium selenide
  • Density functional theory
  • Electronic properties
  • First-principle calculations
  • Optical properties
  • Strain effect

Product types of Minciencias

  • A2 article - Q2


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