Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Viktor Tulupenko, Volodymyr Akimov, Roman Demediuk, Carlos Duque, Oksana Fomina, Dmitrii Sushchenko

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.

Original languageEnglish
Title of host publication2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages177-180
Number of pages4
ISBN (Electronic)9781728120652
DOIs
StatePublished - 1 Apr 2019
Event39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ukraine
Duration: 16 Apr 201918 Apr 2019

Publication series

Name2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

Conference

Conference39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019
CountryUkraine
CityKyiv
Period16/04/1918/04/19

Keywords

  • background impurity
  • modulation doping
  • SiGe quantum wells

Fingerprint Dive into the research topics of 'Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW'. Together they form a unique fingerprint.

Cite this