TY - JOUR
T1 - Electronic and magnetic properties of stacked graphene quantum dots
AU - Tiutiunnyk, A.
AU - Laroze, D.
AU - Correa, J. D.
AU - Mora-Ramos, M. E.
N1 - Funding Information:
DL acknowledges partial financial support from Centers of Excellence with BASAL/ANID financing, AFB180001 , CEDENNA. MEMR acknowledges support from Mexican CONACYT under Grant CB 2017-2018/A1-S-8218 .
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2023/1
Y1 - 2023/1
N2 - The electronic properties of vertically coupled stacked graphene quantum dots (GQDs) of triangular shape are investigated using density functional theory, including the influence of applied electric field. Both bilayer and trilayer configurations with different sizes are considered, and quantum dot edges are assumed to be passivated with hydrogen atoms. The electric field has, indeed, an effect on the relative positions of atoms in the layers and also on the inter-layer distances, although it is very slight, just reaching up to half an Angstrom. Electronic states in the dots are not largely affected by the electric field in the case of AA and AAA stacks, but significant variations are induced by it in the case of AB and ABA structures, mainly in the states with energies in the vicinity if the Fermi level. Magnetic features are reported for zigzag structures via the calculation of total spin moment. No magnetic response associated with spin is present on the case of AA bilayer GQDs, whereas zigzag-edged trilayer ABA and AAA, and bilayer AB structures show a net magnetic polarization. In trilayer GQDs, the magnetization is significantly reduced as a result of the increment in electric field intensity, independently of the size. In contrast, for bilayer AB structures, total spin moment is only very slightly affected by the applied field.
AB - The electronic properties of vertically coupled stacked graphene quantum dots (GQDs) of triangular shape are investigated using density functional theory, including the influence of applied electric field. Both bilayer and trilayer configurations with different sizes are considered, and quantum dot edges are assumed to be passivated with hydrogen atoms. The electric field has, indeed, an effect on the relative positions of atoms in the layers and also on the inter-layer distances, although it is very slight, just reaching up to half an Angstrom. Electronic states in the dots are not largely affected by the electric field in the case of AA and AAA stacks, but significant variations are induced by it in the case of AB and ABA structures, mainly in the states with energies in the vicinity if the Fermi level. Magnetic features are reported for zigzag structures via the calculation of total spin moment. No magnetic response associated with spin is present on the case of AA bilayer GQDs, whereas zigzag-edged trilayer ABA and AAA, and bilayer AB structures show a net magnetic polarization. In trilayer GQDs, the magnetization is significantly reduced as a result of the increment in electric field intensity, independently of the size. In contrast, for bilayer AB structures, total spin moment is only very slightly affected by the applied field.
KW - DFT
KW - Electric field
KW - Electronic properties
KW - Magnetic properties
KW - Stacked graphene quantum dots
KW - Structural properties
UR - http://www.scopus.com/inward/record.url?scp=85146250191&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2022.109550
DO - 10.1016/j.diamond.2022.109550
M3 - Artículo
AN - SCOPUS:85146250191
SN - 0925-9635
VL - 131
JO - Diamond and Related Materials
JF - Diamond and Related Materials
M1 - 109550
ER -