Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

Viktor Tulupenko, Volodymyr Akimov, Roman Demediuk, Anton Tiutiunnyk, Carlos Duque, Dmitrii Sushchenko, Oksana Fomina, Alvaro Morales, David Laroze

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.

Original languageEnglish
Title of host publication2020 IEEE 40th International Conference on Electronics and Nanotechnology, ELNANO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages109-113
Number of pages5
ISBN (Electronic)9781728197135
DOIs
StatePublished - Apr 2020
Event40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020 - Kyiv, Ukraine
Duration: 22 Apr 202024 Apr 2020

Publication series

Name2020 IEEE 40th International Conference on Electronics and Nanotechnology, ELNANO 2020 - Proceedings

Conference

Conference40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020
CountryUkraine
CityKyiv
Period22/04/2024/04/20

Keywords

  • electric field
  • modulation doping
  • shallow impurity
  • SiGe quantum wells

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    Tulupenko, V., Akimov, V., Demediuk, R., Tiutiunnyk, A., Duque, C., Sushchenko, D., Fomina, O., Morales, A., & Laroze, D. (2020). Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field. In 2020 IEEE 40th International Conference on Electronics and Nanotechnology, ELNANO 2020 - Proceedings (pp. 109-113). [9088792] (2020 IEEE 40th International Conference on Electronics and Nanotechnology, ELNANO 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELNANO50318.2020.9088792