Hydrostatic pressure effects on the donor impurity-related photoionization cross-section in cylindrical-shaped GaAs/GaAlAs quantum well wires

J. D. Correa, O. Cepeda-Giraldo, N. Porras-Montenegro, C. A. Duque

Research output: Contribution to conferencePaper

21 Scopus citations

Abstract

Using a variational method the binding energy has been calculated for a shallow donor impurity and the donor-related photoionization cross-section in 1D and 0D GaAs low-dimensional systems. The dependence on the binding energy and the photoionization cross-section for a hydrogenic donor impurity in the finite potential model are discussed and the results are presented as a function of the radius, polarization of the photon, applied hydrostatic pressure, and photon energy. The calculations for the pressure effects are performed both in the direct and indirect GaAs gap regime. Calculations are presented for an on-axis (on-center) impurity in the wire (in the dot). © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageAmerican English
Pages3311-3317
Number of pages7
DOIs
StatePublished - 1 Nov 2004
EventPhysica Status Solidi (B) Basic Research -
Duration: 1 Nov 2004 → …

Conference

ConferencePhysica Status Solidi (B) Basic Research
Period1/11/04 → …

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