Background impurities in Si<inf>0.8</inf>Ge<inf>0.2</inf>/Si/Si<inf>0.8</inf>Ge<inf>0.2</inf>n-type δ-doped QW

V. Tulupenko, C. A. Duque, A. L. Morales, A. Tiutiunnyk, R. Demediuk, T. Dmytrychenko, O. Fomina, V. Akimov, R. L. Restrepo, M. E. Mora-Ramos

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

Resumen

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.
Idioma originalInglés estadounidense
PublicaciónPhysica Status Solidi (B) Basic Research
DOI
EstadoPublicada - 1 abr 2017

Huella dactilar

Semiconductor quantum wells
quantum wells
Impurities
impurities
ionization
Ionization potential
Electron energy levels
Ionization
energy levels
energy
profiles

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Tulupenko, V., Duque, C. A., Morales, A. L., Tiutiunnyk, A., Demediuk, R., Dmytrychenko, T., ... Mora-Ramos, M. E. (2017). Background impurities in Si<inf>0.8</inf>Ge<inf>0.2</inf>/Si/Si<inf>0.8</inf>Ge<inf>0.2</inf>n-type δ-doped QW. Physica Status Solidi (B) Basic Research. https://doi.org/10.1002/pssb.201600464
Tulupenko, V. ; Duque, C. A. ; Morales, A. L. ; Tiutiunnyk, A. ; Demediuk, R. ; Dmytrychenko, T. ; Fomina, O. ; Akimov, V. ; Restrepo, R. L. ; Mora-Ramos, M. E. / Background impurities in Si<inf>0.8</inf>Ge<inf>0.2</inf>/Si/Si<inf>0.8</inf>Ge<inf>0.2</inf>n-type δ-doped QW. En: Physica Status Solidi (B) Basic Research. 2017.
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title = "Background impurities in Si0.8Ge0.2/Si/Si0.8Ge0.2n-type δ-doped QW",
abstract = "{\circledC} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.",
author = "V. Tulupenko and Duque, {C. A.} and Morales, {A. L.} and A. Tiutiunnyk and R. Demediuk and T. Dmytrychenko and O. Fomina and V. Akimov and Restrepo, {R. L.} and Mora-Ramos, {M. E.}",
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Tulupenko, V, Duque, CA, Morales, AL, Tiutiunnyk, A, Demediuk, R, Dmytrychenko, T, Fomina, O, Akimov, V, Restrepo, RL & Mora-Ramos, ME 2017, 'Background impurities in Si<inf>0.8</inf>Ge<inf>0.2</inf>/Si/Si<inf>0.8</inf>Ge<inf>0.2</inf>n-type δ-doped QW', Physica Status Solidi (B) Basic Research. https://doi.org/10.1002/pssb.201600464

Background impurities in Si<inf>0.8</inf>Ge<inf>0.2</inf>/Si/Si<inf>0.8</inf>Ge<inf>0.2</inf>n-type δ-doped QW. / Tulupenko, V.; Duque, C. A.; Morales, A. L.; Tiutiunnyk, A.; Demediuk, R.; Dmytrychenko, T.; Fomina, O.; Akimov, V.; Restrepo, R. L.; Mora-Ramos, M. E.

En: Physica Status Solidi (B) Basic Research, 01.04.2017.

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

TY - JOUR

T1 - Background impurities in Si0.8Ge0.2/Si/Si0.8Ge0.2n-type δ-doped QW

AU - Tulupenko, V.

AU - Duque, C. A.

AU - Morales, A. L.

AU - Tiutiunnyk, A.

AU - Demediuk, R.

AU - Dmytrychenko, T.

AU - Fomina, O.

AU - Akimov, V.

AU - Restrepo, R. L.

AU - Mora-Ramos, M. E.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

AB - © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Additional (residual) impurities in the barriers change the energy profile of a quantum well. This means that they alter the ionization energy for the impurity delta layer situated within the quantum well. In turn, this is accompanied by the change of a V-shaped quantum well created by ionization of the delta layer. All of this is the subject of studies presented in this article. It has been shown that the most dramatic are the changes in the difference between the space-quantized energy levels for an edge-doped quantum well.

U2 - 10.1002/pssb.201600464

DO - 10.1002/pssb.201600464

M3 - Article

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

SN - 0370-1972

ER -