Differences between thin films deposition systems in the production transition metal nitride

J. H. Quintero, A. Mariño, P. J. Arango

Resultado de la investigación: Contribución a una conferenciaArtículo

7 Citas (Scopus)

Resumen

The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material. The techniques of Pulsed Arc, Ionic Implantation and Sputtering have differences to produce coatings. Currently, AuN films have been grown by different techniques such as ion implantation, Reactive Ion Sputtering and Pulsed Arc, which have differences in the grown of the film. Siller 2002 reported a binding energy of 396.6 eV to N1s narrow spectrum as the first direct observation of a gold nitride. In this work, AuN thin films were grown in a system Plasma-Assisted Physical Vapor Deposition by pulsed arc technique. A N1s spectra was obtained with binding energies of 398.1, which by means of the differences between the techniques of ion implantation, sputtering and pulsed arc is concluded have been assigned to gold nitride species.
Idioma originalInglés estadounidense
DOI
EstadoPublicada - 1 ene 2013
EventoJournal of Physics: Conference Series -
Duración: 1 ene 2013 → …

Conferencia

ConferenciaJournal of Physics: Conference Series
Período1/01/13 → …

Huella dactilar

metal nitrides
arcs
transition metals
sputtering
thin films
nitrides
ion implantation
binding energy
gold
coatings
implantation
vapor deposition
vacuum
ions

Citar esto

Quintero, J. H., Mariño, A., & Arango, P. J. (2013). Differences between thin films deposition systems in the production transition metal nitride. Papel presentado en Journal of Physics: Conference Series, . https://doi.org/10.1088/1742-6596/466/1/012002
Quintero, J. H. ; Mariño, A. ; Arango, P. J. / Differences between thin films deposition systems in the production transition metal nitride. Papel presentado en Journal of Physics: Conference Series, .
@conference{705528a4e7f34cdfaf3456593a9bdc29,
title = "Differences between thin films deposition systems in the production transition metal nitride",
abstract = "The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material. The techniques of Pulsed Arc, Ionic Implantation and Sputtering have differences to produce coatings. Currently, AuN films have been grown by different techniques such as ion implantation, Reactive Ion Sputtering and Pulsed Arc, which have differences in the grown of the film. Siller 2002 reported a binding energy of 396.6 eV to N1s narrow spectrum as the first direct observation of a gold nitride. In this work, AuN thin films were grown in a system Plasma-Assisted Physical Vapor Deposition by pulsed arc technique. A N1s spectra was obtained with binding energies of 398.1, which by means of the differences between the techniques of ion implantation, sputtering and pulsed arc is concluded have been assigned to gold nitride species.",
author = "Quintero, {J. H.} and A. Mari{\~n}o and Arango, {P. J.}",
year = "2013",
month = "1",
day = "1",
doi = "10.1088/1742-6596/466/1/012002",
language = "American English",
note = "Journal of Physics: Conference Series ; Conference date: 01-01-2013",

}

Differences between thin films deposition systems in the production transition metal nitride. / Quintero, J. H.; Mariño, A.; Arango, P. J.

2013. Papel presentado en Journal of Physics: Conference Series, .

Resultado de la investigación: Contribución a una conferenciaArtículo

TY - CONF

T1 - Differences between thin films deposition systems in the production transition metal nitride

AU - Quintero, J. H.

AU - Mariño, A.

AU - Arango, P. J.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material. The techniques of Pulsed Arc, Ionic Implantation and Sputtering have differences to produce coatings. Currently, AuN films have been grown by different techniques such as ion implantation, Reactive Ion Sputtering and Pulsed Arc, which have differences in the grown of the film. Siller 2002 reported a binding energy of 396.6 eV to N1s narrow spectrum as the first direct observation of a gold nitride. In this work, AuN thin films were grown in a system Plasma-Assisted Physical Vapor Deposition by pulsed arc technique. A N1s spectra was obtained with binding energies of 398.1, which by means of the differences between the techniques of ion implantation, sputtering and pulsed arc is concluded have been assigned to gold nitride species.

AB - The progress in vacuum technology have enabled the development of advanced coatings processes such as plasma assisted systems, which can produce thin films of different composition and optimum properties, that cannot be collected for the same material. The techniques of Pulsed Arc, Ionic Implantation and Sputtering have differences to produce coatings. Currently, AuN films have been grown by different techniques such as ion implantation, Reactive Ion Sputtering and Pulsed Arc, which have differences in the grown of the film. Siller 2002 reported a binding energy of 396.6 eV to N1s narrow spectrum as the first direct observation of a gold nitride. In this work, AuN thin films were grown in a system Plasma-Assisted Physical Vapor Deposition by pulsed arc technique. A N1s spectra was obtained with binding energies of 398.1, which by means of the differences between the techniques of ion implantation, sputtering and pulsed arc is concluded have been assigned to gold nitride species.

U2 - 10.1088/1742-6596/466/1/012002

DO - 10.1088/1742-6596/466/1/012002

M3 - Paper

ER -

Quintero JH, Mariño A, Arango PJ. Differences between thin films deposition systems in the production transition metal nitride. 2013. Papel presentado en Journal of Physics: Conference Series, . https://doi.org/10.1088/1742-6596/466/1/012002