Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response

J. D. Correa, M. E. Mora-Ramos, C. A. Duque

Resultado de la investigación: Contribución a una revistaArtículo

Resumen

Copyright © 2017 American Scientific Publishers All rights reserved. The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is assumed to have cylindrical shape and the influence of external tuning probes such as hydrostatic pressure and static electric fields is particularly taken into account. The electron states are obtained within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement. The nonlinear optical coefficients are calculated using a nonperturbative solution of the density-matrix Bloch equation. Our results show that the resonance-related features of the optical response become shifted in the frequency range of the incident radiation due to the effect of the hydrostatic pressure, the strength of the applied field and the change in the impurity center position.
Idioma originalInglés estadounidense
Páginas (desde-hasta)1517-1524
Número de páginas8
PublicaciónJournal of Nanoscience and Nanotechnology
Volumen17
DOI
EstadoPublicada - 1 ene 2017

    Huella digital

Citar esto