Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response

J. D. Correa, M. E. Mora-Ramos, C. A. Duque

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

Resumen

Copyright © 2017 American Scientific Publishers All rights reserved. The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is assumed to have cylindrical shape and the influence of external tuning probes such as hydrostatic pressure and static electric fields is particularly taken into account. The electron states are obtained within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement. The nonlinear optical coefficients are calculated using a nonperturbative solution of the density-matrix Bloch equation. Our results show that the resonance-related features of the optical response become shifted in the frequency range of the incident radiation due to the effect of the hydrostatic pressure, the strength of the applied field and the change in the impurity center position.
Idioma originalInglés estadounidense
Páginas (desde-hasta)1517-1524
Número de páginas8
PublicaciónJournal of Nanoscience and Nanotechnology
DOI
EstadoPublicada - 1 ene 2017

Huella dactilar

Semiconductors
Hydrostatic Pressure
zincblende
Nitrides
nitrides
Hydrostatic pressure
Impurities
Semiconductor materials
hydrostatic pressure
impurities
Nanostructures
Hamiltonians
Semiconductor quantum wires
incident radiation
rectification
Electrons
Radiation
coefficients
electron states
quantum wires

Citar esto

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title = "Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response",
abstract = "Copyright {\circledC} 2017 American Scientific Publishers All rights reserved. The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is assumed to have cylindrical shape and the influence of external tuning probes such as hydrostatic pressure and static electric fields is particularly taken into account. The electron states are obtained within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement. The nonlinear optical coefficients are calculated using a nonperturbative solution of the density-matrix Bloch equation. Our results show that the resonance-related features of the optical response become shifted in the frequency range of the incident radiation due to the effect of the hydrostatic pressure, the strength of the applied field and the change in the impurity center position.",
author = "Correa, {J. D.} and Mora-Ramos, {M. E.} and Duque, {C. A.}",
year = "2017",
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doi = "10.1166/jnn.2017.13062",
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Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response. / Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

En: Journal of Nanoscience and Nanotechnology, 01.01.2017, p. 1517-1524.

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

TY - JOUR

T1 - Donor impurity states in semiconductor zincblende nitride quantum systems as a source of nonlinear optical response

AU - Correa, J. D.

AU - Mora-Ramos, M. E.

AU - Duque, C. A.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Copyright © 2017 American Scientific Publishers All rights reserved. The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is assumed to have cylindrical shape and the influence of external tuning probes such as hydrostatic pressure and static electric fields is particularly taken into account. The electron states are obtained within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement. The nonlinear optical coefficients are calculated using a nonperturbative solution of the density-matrix Bloch equation. Our results show that the resonance-related features of the optical response become shifted in the frequency range of the incident radiation due to the effect of the hydrostatic pressure, the strength of the applied field and the change in the impurity center position.

AB - Copyright © 2017 American Scientific Publishers All rights reserved. The optical absorption and the optical rectification coefficients associated to hydrogenic impurity interstate transitions in zincblende GaN-based nanostructures of the quantum wire type are investigated. The system is assumed to have cylindrical shape and the influence of external tuning probes such as hydrostatic pressure and static electric fields is particularly taken into account. The electron states are obtained within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement. The nonlinear optical coefficients are calculated using a nonperturbative solution of the density-matrix Bloch equation. Our results show that the resonance-related features of the optical response become shifted in the frequency range of the incident radiation due to the effect of the hydrostatic pressure, the strength of the applied field and the change in the impurity center position.

U2 - 10.1166/jnn.2017.13062

DO - 10.1166/jnn.2017.13062

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

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