Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Viktor Tulupenko; Volodymyr Akimov; Roman Demediuk; Carlos Duque; Oksana Fomina; Dmitrii Sushchenko

doi:10.1109/ELNANO.2019.8783451

Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Viktor Tulupenko, Volodymyr Akimov, Roman Demediuk, Carlos Duque, Oksana Fomina, Dmitrii Sushchenko

Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

Resumen

Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.

Idioma original	Inglés
Título de la publicación alojada	2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
Editorial	Institute of Electrical and Electronics Engineers Inc.
Páginas	177-180
Número de páginas	4
ISBN (versión digital)	9781728120652
DOI	https://doi.org/10.1109/ELNANO.2019.8783451
Estado	Publicada - 1 abr. 2019
Evento	39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ucrania Duración: 16 abr. 2019 → 18 abr. 2019

Serie de la publicación

Nombre	2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

Conferencia

Conferencia	39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019
País/Territorio	Ucrania
Ciudad	Kyiv
Período	16/04/19 → 18/04/19

Acceder al documento

10.1109/ELNANO.2019.8783451

Otros archivos y enlaces

http://www.scopus.com/inward/record.url?scp=85070899466&partnerID=8YFLogxK

Citar esto

Tulupenko, V., Akimov, V., Demediuk, R., Duque, C., Fomina, O., & Sushchenko, D. (2019). Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. En 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings (pp. 177-180). [8783451] (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELNANO.2019.8783451

Tulupenko, Viktor ; Akimov, Volodymyr ; Demediuk, Roman et al. / Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 177-180 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).

@inproceedings{087eb19e668545a9892bd5e89f4083cd,

title = "Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW",

abstract = "Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.",

keywords = "background impurity, modulation doping, SiGe quantum wells",

author = "Viktor Tulupenko and Volodymyr Akimov and Roman Demediuk and Carlos Duque and Oksana Fomina and Dmitrii Sushchenko",

year = "2019",

month = apr,

day = "1",

doi = "10.1109/ELNANO.2019.8783451",

language = "Ingl{\'e}s",

series = "2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "177--180",

booktitle = "2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings",

address = "Estados Unidos",

note = "null ; Conference date: 16-04-2019 Through 18-04-2019",

}

Tulupenko, V, Akimov, V, Demediuk, R, Duque, C, Fomina, O & Sushchenko, D 2019, Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. En 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings., 8783451, 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 177-180, 39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019, Kyiv, Ucrania, 16/04/19. https://doi.org/10.1109/ELNANO.2019.8783451

Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. / Tulupenko, Viktor; Akimov, Volodymyr; Demediuk, Roman et al.

2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 177-180 8783451 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).

Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › revisión exhaustiva

TY - GEN

T1 - Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

AU - Tulupenko, Viktor

AU - Akimov, Volodymyr

AU - Demediuk, Roman

AU - Duque, Carlos

AU - Fomina, Oksana

AU - Sushchenko, Dmitrii

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.

AB - Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.

KW - background impurity

KW - modulation doping

KW - SiGe quantum wells

UR - http://www.scopus.com/inward/record.url?scp=85070899466&partnerID=8YFLogxK

U2 - 10.1109/ELNANO.2019.8783451

DO - 10.1109/ELNANO.2019.8783451

M3 - Contribución a la conferencia

T3 - 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

SP - 177

EP - 180

BT - 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 16 April 2019 through 18 April 2019

ER -

Tulupenko V, Akimov V, Demediuk R, Duque C, Fomina O, Sushchenko D. Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. En 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 177-180. 8783451. (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). doi: 10.1109/ELNANO.2019.8783451

Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Resumen

Serie de la publicación

Conferencia

Acceder al documento

Otros archivos y enlaces

Huella

Citar esto