Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

Viktor Tulupenko, Volodymyr Akimov, Roman Demediuk, Carlos Duque, Oksana Fomina, Dmitrii Sushchenko

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferenciaInvestigaciónrevisión exhaustiva

Resumen

Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.

Idioma originalInglés
Título de la publicación alojada2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas177-180
Número de páginas4
ISBN (versión digital)9781728120652
DOI
EstadoPublicada - 1 abr 2019
Evento39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ucrania
Duración: 16 abr 201918 abr 2019

Serie de la publicación

Nombre2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings

Conferencia

Conferencia39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019
PaísUcrania
CiudadKyiv
Período16/04/1918/04/19

Huella dactilar

Doping (additives)
Impurities
Optical devices
Binding energy
Semiconductor quantum wells
Nanostructures

Citar esto

Tulupenko, V., Akimov, V., Demediuk, R., Duque, C., Fomina, O., & Sushchenko, D. (2019). Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. En 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings (pp. 177-180). [8783451] (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ELNANO.2019.8783451
Tulupenko, Viktor ; Akimov, Volodymyr ; Demediuk, Roman ; Duque, Carlos ; Fomina, Oksana ; Sushchenko, Dmitrii. / Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 177-180 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).
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abstract = "Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.",
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Tulupenko, V, Akimov, V, Demediuk, R, Duque, C, Fomina, O & Sushchenko, D 2019, Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. En 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings., 8783451, 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 177-180, Kyiv, Ucrania, 16/04/19. https://doi.org/10.1109/ELNANO.2019.8783451

Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. / Tulupenko, Viktor; Akimov, Volodymyr; Demediuk, Roman; Duque, Carlos; Fomina, Oksana; Sushchenko, Dmitrii.

2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 177-180 8783451 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferenciaInvestigaciónrevisión exhaustiva

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T1 - Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW

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AU - Fomina, Oksana

AU - Sushchenko, Dmitrii

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N2 - Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.

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Tulupenko V, Akimov V, Demediuk R, Duque C, Fomina O, Sushchenko D. Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. En 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 177-180. 8783451. (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings). https://doi.org/10.1109/ELNANO.2019.8783451