Resumen
Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.
| Idioma original | Inglés |
|---|---|
| Título de la publicación alojada | 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings |
| Editorial | Institute of Electrical and Electronics Engineers Inc. |
| Páginas | 177-180 |
| Número de páginas | 4 |
| ISBN (versión digital) | 9781728120652 |
| DOI | |
| Estado | Publicada - 1 abr 2019 |
| Evento | 39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 - Kyiv, Ucrania Duración: 16 abr 2019 → 18 abr 2019 |
Serie de la publicación
| Nombre | 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings |
|---|
Conferencia
| Conferencia | 39th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2019 |
|---|---|
| País | Ucrania |
| Ciudad | Kyiv |
| Período | 16/04/19 → 18/04/19 |
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Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW. / Tulupenko, Viktor; Akimov, Volodymyr; Demediuk, Roman; Duque, Carlos; Fomina, Oksana; Sushchenko, Dmitrii.
2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 177-180 8783451 (2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings).Resultado de la investigación: Capítulo del libro/informe/acta de congreso › Contribución a la conferencia › Investigación › revisión exhaustiva
TY - GEN
T1 - Effect of Sparse Doping in Barriers on the Energy Structure of Center-Delta-Doped QW
AU - Tulupenko, Viktor
AU - Akimov, Volodymyr
AU - Demediuk, Roman
AU - Duque, Carlos
AU - Fomina, Oksana
AU - Sushchenko, Dmitrii
PY - 2019/4/1
Y1 - 2019/4/1
N2 - Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.
AB - Effect of sparse (presumably background) shallow donor impurity on the energy structure of SiGe/Si quantum well structure delta-doped to the center of the well is studied numerically. The method includes calculation of impurity binding energy. The proposed nanostructure configuration can be used to create tunable optical devices in THz frequency region.
KW - background impurity
KW - modulation doping
KW - SiGe quantum wells
UR - http://www.scopus.com/inward/record.url?scp=85070899466&partnerID=8YFLogxK
U2 - 10.1109/ELNANO.2019.8783451
DO - 10.1109/ELNANO.2019.8783451
M3 - Contribución a la conferencia
T3 - 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
SP - 177
EP - 180
BT - 2019 IEEE 39th International Conference on Electronics and Nanotechnology, ELNANO 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -