Effects of hydrostatic pressure and electric field on the electron-related optical properties in GaAs multiple quantum well

D. A. Ospina, M. E. Mora-Ramos, C. A. Duque

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

1 Cita (Scopus)

Resumen

Copyright © 2017 American Scientific Publishers All rights reserved. The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coefficients of linear and nonlinear optical absorption and of the relative refractive index change associated to transitions between allowed subbands are calculated with the use of a two-level scheme for the density matrix equation of motion and the rotating wave approximation. It is noticed that the hydrostatic pressure enhances the amplitude of the nonlinear contribution to the optical response of the multiple quantum well, whilst the linear one becomes reduced. Besides, the calculated coefficients are blueshifted due to the increasing of the applied electric field, and shows systematically dependence upon the hydrostatic pressure. The comparison of these results with those related with the consideration of a stationary spectrum of states in the heterostructure-obtained by placing infinite confining barriers at a conveniently far distance-shows essential differences in the pressure-induced effects in the sense of resonant frequency shifting as well as in the variation of the amplitudes of the optical responses.
Idioma originalInglés estadounidense
Páginas (desde-hasta)1247-1254
Número de páginas8
PublicaciónJournal of Nanoscience and Nanotechnology
DOI
EstadoPublicada - 1 ene 2017

Huella dactilar

Hydrostatic Pressure
Hydrostatic pressure
pressure distribution
hydrostatic pressure
Semiconductor quantum wells
Optical properties
Electric fields
quantum wells
Electrons
optical properties
electric fields
Refractometry
Semiconductors
electrons
coefficients
confining
Light absorption
Electron energy levels
Equations of motion
Electronic structure

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title = "Effects of hydrostatic pressure and electric field on the electron-related optical properties in GaAs multiple quantum well",
abstract = "Copyright {\circledC} 2017 American Scientific Publishers All rights reserved. The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coefficients of linear and nonlinear optical absorption and of the relative refractive index change associated to transitions between allowed subbands are calculated with the use of a two-level scheme for the density matrix equation of motion and the rotating wave approximation. It is noticed that the hydrostatic pressure enhances the amplitude of the nonlinear contribution to the optical response of the multiple quantum well, whilst the linear one becomes reduced. Besides, the calculated coefficients are blueshifted due to the increasing of the applied electric field, and shows systematically dependence upon the hydrostatic pressure. The comparison of these results with those related with the consideration of a stationary spectrum of states in the heterostructure-obtained by placing infinite confining barriers at a conveniently far distance-shows essential differences in the pressure-induced effects in the sense of resonant frequency shifting as well as in the variation of the amplitudes of the optical responses.",
author = "Ospina, {D. A.} and Mora-Ramos, {M. E.} and Duque, {C. A.}",
year = "2017",
month = "1",
day = "1",
doi = "10.1166/jnn.2017.12567",
language = "American English",
pages = "1247--1254",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",

}

Effects of hydrostatic pressure and electric field on the electron-related optical properties in GaAs multiple quantum well. / Ospina, D. A.; Mora-Ramos, M. E.; Duque, C. A.

En: Journal of Nanoscience and Nanotechnology, 01.01.2017, p. 1247-1254.

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

TY - JOUR

T1 - Effects of hydrostatic pressure and electric field on the electron-related optical properties in GaAs multiple quantum well

AU - Ospina, D. A.

AU - Mora-Ramos, M. E.

AU - Duque, C. A.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Copyright © 2017 American Scientific Publishers All rights reserved. The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coefficients of linear and nonlinear optical absorption and of the relative refractive index change associated to transitions between allowed subbands are calculated with the use of a two-level scheme for the density matrix equation of motion and the rotating wave approximation. It is noticed that the hydrostatic pressure enhances the amplitude of the nonlinear contribution to the optical response of the multiple quantum well, whilst the linear one becomes reduced. Besides, the calculated coefficients are blueshifted due to the increasing of the applied electric field, and shows systematically dependence upon the hydrostatic pressure. The comparison of these results with those related with the consideration of a stationary spectrum of states in the heterostructure-obtained by placing infinite confining barriers at a conveniently far distance-shows essential differences in the pressure-induced effects in the sense of resonant frequency shifting as well as in the variation of the amplitudes of the optical responses.

AB - Copyright © 2017 American Scientific Publishers All rights reserved. The properties of the electronic structure of a finite-barrier semiconductor multiple quantum well are investigated taking into account the effects of the application of a static electric field and hydrostatic pressure. With the information of the allowed quasi-stationary energy states, the coefficients of linear and nonlinear optical absorption and of the relative refractive index change associated to transitions between allowed subbands are calculated with the use of a two-level scheme for the density matrix equation of motion and the rotating wave approximation. It is noticed that the hydrostatic pressure enhances the amplitude of the nonlinear contribution to the optical response of the multiple quantum well, whilst the linear one becomes reduced. Besides, the calculated coefficients are blueshifted due to the increasing of the applied electric field, and shows systematically dependence upon the hydrostatic pressure. The comparison of these results with those related with the consideration of a stationary spectrum of states in the heterostructure-obtained by placing infinite confining barriers at a conveniently far distance-shows essential differences in the pressure-induced effects in the sense of resonant frequency shifting as well as in the variation of the amplitudes of the optical responses.

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DO - 10.1166/jnn.2017.12567

M3 - Article

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

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