Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

A. Tiutiunnyk, V. Akimov, V. Tulupenko, M. E. Mora-Ramos, E. Kasapoglu, F. Ungan, I. Sökmen, A. L. Morales, C. A. Duque

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

2 Citas (Scopus)

Resumen

© 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.
Idioma originalInglés estadounidense
Páginas (desde-hasta)95-108
Número de páginas14
PublicaciónPhysica B: Condensed Matter
Volumen484
DOI
EstadoPublicada - 1 mar 2016

Huella dactilar

Excitons
Semiconductor quantum dots
Electronic structure
aluminum gallium arsenides
Optical properties
quantum dots
excitons
Impurities
electronic structure
optical properties
impurities
Binding energy
triangles
Photoluminescence
binding energy
direct current
Electric fields
photoluminescence
Atoms
electric fields

Citar esto

Tiutiunnyk, A. ; Akimov, V. ; Tulupenko, V. ; Mora-Ramos, M. E. ; Kasapoglu, E. ; Ungan, F. ; Sökmen, I. ; Morales, A. L. ; Duque, C. A. / Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states. En: Physica B: Condensed Matter. 2016 ; Vol. 484. pp. 95-108.
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abstract = "{\circledC} 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.",
author = "A. Tiutiunnyk and V. Akimov and V. Tulupenko and Mora-Ramos, {M. E.} and E. Kasapoglu and F. Ungan and I. S{\"o}kmen and Morales, {A. L.} and Duque, {C. A.}",
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Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states. / Tiutiunnyk, A.; Akimov, V.; Tulupenko, V.; Mora-Ramos, M. E.; Kasapoglu, E.; Ungan, F.; Sökmen, I.; Morales, A. L.; Duque, C. A.

En: Physica B: Condensed Matter, Vol. 484, 01.03.2016, p. 95-108.

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

TY - JOUR

T1 - Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

AU - Tiutiunnyk, A.

AU - Akimov, V.

AU - Tulupenko, V.

AU - Mora-Ramos, M. E.

AU - Kasapoglu, E.

AU - Ungan, F.

AU - Sökmen, I.

AU - Morales, A. L.

AU - Duque, C. A.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - © 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

AB - © 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

U2 - 10.1016/j.physb.2015.12.045

DO - 10.1016/j.physb.2015.12.045

M3 - Article

VL - 484

SP - 95

EP - 108

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -