Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

A. Tiutiunnyk; V. Akimov; V. Tulupenko; M. E. Mora-Ramos; E. Kasapoglu; F. Ungan; I. Sökmen; A. L. Morales; C. A. Duque

doi:10.1016/j.physb.2015.12.045

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

A. Tiutiunnyk, V. Akimov, V. Tulupenko, M. E. Mora-Ramos, E. Kasapoglu, F. Ungan, I. Sökmen, A. L. Morales, C. A. Duque

Grupo de Investigación en Materiales Nanoestructurados y Biomodelación

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© 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

Idioma original	Inglés estadounidense
Páginas (desde-hasta)	95-108
Número de páginas	14
Publicación	Physica B: Condensed Matter
Volumen	484
DOI	https://doi.org/10.1016/j.physb.2015.12.045 https://doi.org/10.1016/j.physb.2015.12.045
Estado	Publicada - 1 mar. 2016

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Tiutiunnyk, A., Akimov, V., Tulupenko, V., Mora-Ramos, M. E., Kasapoglu, E., Ungan, F., Sökmen, I., Morales, A. L., & Duque, C. A. (2016). Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states. Physica B: Condensed Matter, 484, 95-108. https://doi.org/10.1016/j.physb.2015.12.045, https://doi.org/10.1016/j.physb.2015.12.045

@article{32ce04bbd69941979b272856fbbfe543,

title = "Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states",

abstract = "{\textcopyright} 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.",

author = "A. Tiutiunnyk and V. Akimov and V. Tulupenko and Mora-Ramos, {M. E.} and E. Kasapoglu and F. Ungan and I. S{\"o}kmen and Morales, {A. L.} and Duque, {C. A.}",

year = "2016",

month = mar,

day = "1",

doi = "10.1016/j.physb.2015.12.045",

language = "American English",

volume = "484",

pages = "95--108",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

Tiutiunnyk, A, Akimov, V, Tulupenko, V, Mora-Ramos, ME, Kasapoglu, E, Ungan, F, Sökmen, I, Morales, AL & Duque, CA 2016, 'Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states', Physica B: Condensed Matter, vol. 484, pp. 95-108. https://doi.org/10.1016/j.physb.2015.12.045, https://doi.org/10.1016/j.physb.2015.12.045

TY - JOUR

T1 - Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

AU - Tiutiunnyk, A.

AU - Akimov, V.

AU - Tulupenko, V.

AU - Mora-Ramos, M. E.

AU - Kasapoglu, E.

AU - Ungan, F.

AU - Sökmen, I.

AU - Morales, A. L.

AU - Duque, C. A.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - © 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

AB - © 2015 Elsevier B.V. All rights reserved. Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, as well as of the external DC electric field are taken into account. Binding energies of the impurity, exciton energies, interband photoluminescence peak positions as well as linear and non-linear optical properties in THz range caused by transitions between excitonic states are calculated and discussed.

U2 - 10.1016/j.physb.2015.12.045

DO - 10.1016/j.physb.2015.12.045

M3 - Article

SN - 0921-4526

VL - 484

SP - 95

EP - 108

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states

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