Hydrogenic Impurity States in a Delta-Layer Within Quantum Wells in a Transversal Electric Field

Viktor Tulupenko, Volodymyr Akimov, Roman Demediuk, Anton Tiutiunnyk, Carlos Duque, Dmitrii Sushchenko, Oksana Fomina, Alvaro Morales, David Laroze

Resultado de la investigación: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

Resumen

The effect of a transversal electric field on the impurity binding energy and the energy differences between the space-quantized subbands of center delta-doped SiGe/Si quantum well structure is studied numerically with a self-consistent method. The result is explained in terms of the concurrent effects of impurity ionization and the applied field. The predicted phenomenon can be used to tune the energy distances and, accordingly, the working frequencies of possible optical devices.

Idioma originalInglés
Título de la publicación alojada2020 IEEE 40th International Conference on Electronics and Nanotechnology, ELNANO 2020 - Proceedings
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas109-113
Número de páginas5
ISBN (versión digital)9781728197135
DOI
EstadoPublicada - abr 2020
Evento40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020 - Kyiv, Ucrania
Duración: 22 abr 202024 abr 2020

Serie de la publicación

Nombre2020 IEEE 40th International Conference on Electronics and Nanotechnology, ELNANO 2020 - Proceedings

Conferencia

Conferencia40th IEEE International Conference on Electronics and Nanotechnology, ELNANO 2020
PaísUcrania
CiudadKyiv
Período22/04/2024/04/20

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