TY - JOUR
T1 - Influence of applied external fields on the nonlinear optical properties of a semi-infinite asymmetric AlxGa1−xAs/GaAs quantum well
AU - Ungan, F.
AU - Bahar, M. K.
AU - Rodríguez-Magdaleno, K. A.
AU - Mora-Ramos, M. E.
AU - Martínez-Orozco, J. C.
N1 - Funding Information:
J. C. Martínez-Orozco would like to acknowledge to the CONACyT-SEP México for the partially financial support through the Fondo sectorial de investigación para la educación with project A1-S-8842 entitled Estudio de propiedades optoelectrónicas básicas en pozos , puntos y anillos cuánticos de materiales III-V y II-VI y sus heteroestructuras. K. A. Rodríguez-Magdaleno would like to acknowledges to CONACyT - México for the financial support through its posdoctoral grant at the Universidad Autónoma de Zacatecas with project entitled Propiedades optoelectrónicas en pozos y puntos cuánticos multicapas semiconductores III-V y II-VI. M. E. Mora-Ramos acknowledges support from Universidad de Antioquia during the realization of a 2019–2020 sabbatical stay. He also thanks Mexican CONACyT for support through Research Grant A1-S-8218.
Publisher Copyright:
© 2020 Elsevier Ltd
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2021/3/1
Y1 - 2021/3/1
N2 - The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization for asymmetric potential profiles enables to the semiconductor device designers to have possible ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the potential profile. Once the potential profile is well defined, with the desired range on operation, the external factors play also an important role on the optical properties tuning. In particular, in this paper we reported the absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for an AlxGa1−xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions reported here.
AB - The asymmetric potential profiles are of great interest from the nonlinear optical properties point of view for semiconductor devices. The reason for this statement is because the existing theories on nonlinear optical properties obviously depends on the dipole matrix element for the involved transitions and an complete characterization for asymmetric potential profiles enables to the semiconductor device designers to have possible ranges of implementation and because the dipole matrix elements strongly depends on the asymmetry of the potential profile. Once the potential profile is well defined, with the desired range on operation, the external factors play also an important role on the optical properties tuning. In particular, in this paper we reported the absorption coefficient and the relative refractive index changes for semi-infinite inverse Gaussian-like profile for an AlxGa1−xAs/GaAs quantum well when is subjected to a z-directed electric field, to an in-plane x-directed magnetic field and finally to a non-resonant intense laser field effect, being the Al concentration the parameter that allows to shape the potential profile. In general, we conclude that the external factor are an efficient way to tune the optical properties that are in the range of the THz spectrum, at least for the intersubband transitions reported here.
KW - Asymmetric AlGaAs/GaAs QW
KW - Electric and magnetic field effect
KW - Intense laser field effect
KW - Nonlinear optical absorption coefficient
KW - Relative refractive index change
UR - http://www.scopus.com/inward/record.url?scp=85096378576&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2020.105509
DO - 10.1016/j.mssp.2020.105509
M3 - Artículo
AN - SCOPUS:85096378576
VL - 123
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
M1 - 105509
ER -