Influence of nitrogen partial pressure on the microstructure and morphological properties of sputtered RuN coatings

J. H. Quintero, R. Ospina, A. Mello, D. Escobar, E. Restrepo-Parra

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

2 Citas (Scopus)

Resumen

Copyright © 2017 John Wiley & Sons, Ltd. In this work, the production of RuN thin films using the reactive direct current magnetron sputtering technique is presented. Samples were grown with varying Ar/N2ratio with values of 60/40, 80/20, 85/15, 90/10, 95/5, and 100/0. X-ray photoelectron spectroscopy was employed to determine the presence of RuN before and after a sputtering etching process. According to the high-resolution of N1s spectra, 3 peaks were identified at 397.4 ± 0.3 eV, 398.3 ± 0.3 eV, and 398.8 ± 0.3 eV binding energies, corresponding to hybridizations of nitrogen with transition metals, oxynitrides, and oxycarbides. X-ray diffraction analyses were performed, showing the coexistence of the RuN face-centered cubic and Ru hexagonal compact packed phases. After the etching process, the samples grown at nitrogen flow rates greater than 15% continued to show the RuN face-centered cubic phase. Atomic force microscope analyses showed that as the nitrogen concentration increased, the grain size and roughness also tended to increase.
Idioma originalInglés estadounidense
Páginas (desde-hasta)978-984
Número de páginas7
PublicaciónSurface and Interface Analysis
DOI
EstadoPublicada - 1 oct 2017

Huella dactilar

Partial pressure
partial pressure
Nitrogen
coatings
nitrogen
Coatings
microstructure
Microstructure
Etching
etching
oxynitrides
Binding energy
Magnetron sputtering
Transition metals
Sputtering
magnetron sputtering
Microscopes
x rays
roughness
X ray photoelectron spectroscopy

Citar esto

Quintero, J. H. ; Ospina, R. ; Mello, A. ; Escobar, D. ; Restrepo-Parra, E. / Influence of nitrogen partial pressure on the microstructure and morphological properties of sputtered RuN coatings. En: Surface and Interface Analysis. 2017 ; pp. 978-984.
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abstract = "Copyright {\circledC} 2017 John Wiley & Sons, Ltd. In this work, the production of RuN thin films using the reactive direct current magnetron sputtering technique is presented. Samples were grown with varying Ar/N2ratio with values of 60/40, 80/20, 85/15, 90/10, 95/5, and 100/0. X-ray photoelectron spectroscopy was employed to determine the presence of RuN before and after a sputtering etching process. According to the high-resolution of N1s spectra, 3 peaks were identified at 397.4 ± 0.3 eV, 398.3 ± 0.3 eV, and 398.8 ± 0.3 eV binding energies, corresponding to hybridizations of nitrogen with transition metals, oxynitrides, and oxycarbides. X-ray diffraction analyses were performed, showing the coexistence of the RuN face-centered cubic and Ru hexagonal compact packed phases. After the etching process, the samples grown at nitrogen flow rates greater than 15{\%} continued to show the RuN face-centered cubic phase. Atomic force microscope analyses showed that as the nitrogen concentration increased, the grain size and roughness also tended to increase.",
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Influence of nitrogen partial pressure on the microstructure and morphological properties of sputtered RuN coatings. / Quintero, J. H.; Ospina, R.; Mello, A.; Escobar, D.; Restrepo-Parra, E.

En: Surface and Interface Analysis, 01.10.2017, p. 978-984.

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

TY - JOUR

T1 - Influence of nitrogen partial pressure on the microstructure and morphological properties of sputtered RuN coatings

AU - Quintero, J. H.

AU - Ospina, R.

AU - Mello, A.

AU - Escobar, D.

AU - Restrepo-Parra, E.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - Copyright © 2017 John Wiley & Sons, Ltd. In this work, the production of RuN thin films using the reactive direct current magnetron sputtering technique is presented. Samples were grown with varying Ar/N2ratio with values of 60/40, 80/20, 85/15, 90/10, 95/5, and 100/0. X-ray photoelectron spectroscopy was employed to determine the presence of RuN before and after a sputtering etching process. According to the high-resolution of N1s spectra, 3 peaks were identified at 397.4 ± 0.3 eV, 398.3 ± 0.3 eV, and 398.8 ± 0.3 eV binding energies, corresponding to hybridizations of nitrogen with transition metals, oxynitrides, and oxycarbides. X-ray diffraction analyses were performed, showing the coexistence of the RuN face-centered cubic and Ru hexagonal compact packed phases. After the etching process, the samples grown at nitrogen flow rates greater than 15% continued to show the RuN face-centered cubic phase. Atomic force microscope analyses showed that as the nitrogen concentration increased, the grain size and roughness also tended to increase.

AB - Copyright © 2017 John Wiley & Sons, Ltd. In this work, the production of RuN thin films using the reactive direct current magnetron sputtering technique is presented. Samples were grown with varying Ar/N2ratio with values of 60/40, 80/20, 85/15, 90/10, 95/5, and 100/0. X-ray photoelectron spectroscopy was employed to determine the presence of RuN before and after a sputtering etching process. According to the high-resolution of N1s spectra, 3 peaks were identified at 397.4 ± 0.3 eV, 398.3 ± 0.3 eV, and 398.8 ± 0.3 eV binding energies, corresponding to hybridizations of nitrogen with transition metals, oxynitrides, and oxycarbides. X-ray diffraction analyses were performed, showing the coexistence of the RuN face-centered cubic and Ru hexagonal compact packed phases. After the etching process, the samples grown at nitrogen flow rates greater than 15% continued to show the RuN face-centered cubic phase. Atomic force microscope analyses showed that as the nitrogen concentration increased, the grain size and roughness also tended to increase.

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