Temperature shift of intraband absorption peak in tunnel-coupled QW structure

V. Akimov, D. A. Firsov, C. A. Duque, V. Tulupenko, R. M. Balagula, M. Ya Vinnichenko, L. E. Vorobjev

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

Resumen

© 2017 Elsevier B.V. An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift.
Idioma originalInglés estadounidense
Páginas (desde-hasta)160-165
Número de páginas6
PublicaciónOptical Materials
Volumen66
DOI
EstadoPublicada - 1 abr 2017

Huella dactilar

tunnels
Tunnels
shift
Depolarization
Silicon
electromagnetic absorption
Conduction bands
depolarization
Light absorption
Semiconductor quantum wells
Heterojunctions
absorptivity
conduction bands
Energy gap
quantum wells
Temperature
temperature dependence
temperature
silicon
gallium arsenide

Citar esto

Akimov, V. ; Firsov, D. A. ; Duque, C. A. ; Tulupenko, V. ; Balagula, R. M. ; Vinnichenko, M. Ya ; Vorobjev, L. E. / Temperature shift of intraband absorption peak in tunnel-coupled QW structure. En: Optical Materials. 2017 ; Vol. 66. pp. 160-165.
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abstract = "{\circledC} 2017 Elsevier B.V. An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift.",
author = "V. Akimov and Firsov, {D. A.} and Duque, {C. A.} and V. Tulupenko and Balagula, {R. M.} and Vinnichenko, {M. Ya} and Vorobjev, {L. E.}",
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doi = "10.1016/j.optmat.2017.01.050",
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Temperature shift of intraband absorption peak in tunnel-coupled QW structure. / Akimov, V.; Firsov, D. A.; Duque, C. A.; Tulupenko, V.; Balagula, R. M.; Vinnichenko, M. Ya; Vorobjev, L. E.

En: Optical Materials, Vol. 66, 01.04.2017, p. 160-165.

Resultado de la investigación: Contribución a una revistaArtículoInvestigaciónrevisión exhaustiva

TY - JOUR

T1 - Temperature shift of intraband absorption peak in tunnel-coupled QW structure

AU - Akimov, V.

AU - Firsov, D. A.

AU - Duque, C. A.

AU - Tulupenko, V.

AU - Balagula, R. M.

AU - Vinnichenko, M. Ya

AU - Vorobjev, L. E.

PY - 2017/4/1

Y1 - 2017/4/1

N2 - © 2017 Elsevier B.V. An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift.

AB - © 2017 Elsevier B.V. An experimental study of the intersubband light absorption by the 100-period GaAs/Al0.25Ga0.75As double quantum well heterostructure doped with silicon is reported and interpreted. Small temperature redshift of the 1–3 intersubband absorption peak is detected. Numerical calculations of the absorption coefficient including self-consistent Hartree calculations of the bottom of the conduction band show good agreement with the observed phenomena. The temperature dependence of energy gap of the material and the depolarization shift should be accounted for to explain the shift.

U2 - 10.1016/j.optmat.2017.01.050

DO - 10.1016/j.optmat.2017.01.050

M3 - Article

VL - 66

SP - 160

EP - 165

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

ER -